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We report the radio frequency (RF) stress reliability response of 45-nm SOI RF nMOSFETs. The dependence of gate oxide degradation and off-state leakage (due to RF stress) on the contact spacing of the Source/Drain (S/D) terminals and the gate finger-to-gate finger spacing is investigated. The RF device performance trade-offs vs. RF stress reliability that result are investigated. Devices with “tight”...
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