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The cryogenic operation of a low-loss RF switch using a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor is reported. At 77 K the channel resistance of the MOSHFET is three times lower and the contact resistance is 20% lower compared to room temperature. As a result, the performance of the MOSHFET RF switch at 77 K is even superior to that at room temperature.
Novel design concepts and cutting edge results are presented for high-power AlGaN/GaN Heterostructure Field-Effect Transistor switches for power converters, control and radio-frequency applications. For power switching, the HFET design has to be different from that of power amplifiers in order to minimize the contact resistance and avoid current crowding in the metal electrodes of large-periphery...
The performance of novel RF switching devices using insulating gate III-nitride metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) is demontrated. Initial results show that there is no degradation in the transmitted powers or gate leakage current during the 200+ hours stress with +30 dBm CW input powers. Multi-gate RF switching devices that increase the isolation in the...
This paper reports a novel approach in designing high frequency AlGaN/GaN HEMTs based on gate-drain field engineering utilizing a drain-connected field controlling electrode. The absence of frequency behavior degradation with drain bias as well as record high electron velocity values were obtained using gate-to-FCE separation of 0.5-0.7 mum. Thus, we demonstrated that the FCE is a powerful way to...
The oscillation phenomena of current-voltage curves of MSM device grown with AlGaN/GaN multi-quantum well (MQW) interlayer are observed and the pattern of oscillation is related to the sweep voltage. Oscillation phenomena is origin from polarization induced charge resonant tunneling through MQW
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