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Small-signal characteristics of pseudomorphic high-electron-mobility transistors based on donor–acceptor doped heterostructures (DA-pHEMTs) are compared to those of analogous transistors (pHEMTs) based on traditional heterostructures without acceptor doping. It is established that DA-pHEMTs, under otherwise equal conditions, exhibit (despite lower values of the low-field mobility of electrons) a much...
For asymmetric three-barrier resonance-tunneling structures with thin high barriers, the dependence of the integral transmission coefficient on the amplitude and frequency of strong high-frequency resonance fields during two-photon transitions has been studied in the approximation of an electron distribution function weakly varying at energies on the order of several widths of the quantum level. It...
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