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Post breakdown (BD) reliability is an important area of study in ultra-thin gate dielectrics as it has significant implications on the performance degradation, lifetime, reliability margin and power dissipation of advanced sub-22 nm transistors and circuits. A prolonged phase of post-BD can ensure we can live with the circuit with moderate performance and error-free operation, even if the soft breakdown...
Dielectric breakdown in advanced gate stacks in state-of-the-art Si nanoelectronic devices has been one of the key front-end reliability concerns for further CMOS technology downscaling. In this paper, we present the latest findings in using physical analysis techniques such as transmission electron microscopy (TEM)/electron energy loss spectroscopy (EELS)/energy dispersive X-ray spectroscopy (EDS),...
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