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By leveraging on the wealth of Si-CMOS technology know-how and the largely available infrastructures, the fundamental photonic device building blocks and circuit integration platform, essential for the realization of the electronic-photonic integrated circuit (EPIC), have been successfully developed. This presentation gives an overview on the current status of this critical technology and provides...
This paper describes the design of a micromachined nanopositioner with electrothermal actuation and sensing capabilities in a single silicon chip. The positioner has a dynamic range of 14.4 μm with a differential sensing scheme. At 6-V dc bias voltage, the position sensors have a power consumption of 120 mW, and a sensitivity of 0.27 mV/nm. The open-loop bandwidth is 101 Hz and the phase...
FinFET integration challenges and solutions are discussed for the 22 nm node and beyond. Fin dimension scaling is presented and the importance of the sidewall image transfer (SIT) technique is addressed. Diamond-shaped epi growth for the raised source-drain (RSD) is proposed to improve parasitic resistance (Rpara) degraded by 3-D structure with thin Si-body. The issue of Vt -mismatch is discussed...
We present a new ETSOI CMOS integration scheme. The new process flow incorporates all benefits from our previous unipolar work. Only a single mask level is required to form raised source/drain (RSD) and extensions for both NFET and PFET. Another new feature of this work is the incorporation of two strain techniques to boost performance, (1) Si:C RSD for NFET and SiGe RSD for PFET, and (2) enhanced...
This paper reports a MEMS tunable capacitor with a new actuation principle. The new design adopts electrostatic actuation of an electrically floating movable dielectric. This enables us to achieve a high Q factor by eliminating the loss associated with springs in the RF signal path. Also, the design can achieve a high tuning range, by using additional actuation combs and thus eliminating the pull-in...
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