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An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125°C. Key electrical characteristics of the memory include wide signal margins with no outlier bits, high endurance write/read cycling (>>1015 cycles), stable retention (>>10yrs at 125°C), and extremely low bit error rate following 260°C Pb-free...
We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 1013 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.
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