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A methodology for the evaluation of ultra-fast interfacial traps, using jitter measurements as a probe, is developed. This methodology is applied to study the effect of PBTI stress on the density of ultra-fast electron traps (with 500 ps to 5 ns characteristic capture/emission times) in a high-k/Si nMOSFET. It is shown, that in spite of an observed increase of timing jitter after PBTI stress, this...
This paper focused on the delamination study of low profile leadframe package with exposed pad (eLQFP). In this type of package, a specification of silver plating area is required for bond pad. With the shrinkage of the non-plating pad area, and because of low adhesion strength between silver and mold compound, the interface of mold compound and die-pad in the silver plating area may potentially delaminate...
This paper presents the results of thermal performance and mechanical reliability co-design of flip chip devices by a comprehensive evaluation of package structure and material effects. The study provided valuable insights that can assist to identify potential package solutions and enhancement options by considering process, materials, thermal performance and mechanical reliability. With concurrent...
Multi silicon dies stack using through silicon via (TSV) is required for higher performance, greater package miniaturization and more functionality electronic device. A through silicon interposer (TSI) enables interconnect pitch matching between a high I/Os top chip and a low cost organic substrate. TSI also mitigates the risk of extreme low-K (ELK) layers delamiantion. This paper demonstrates the...
Copper pillar bumping is a promising solution to cope with the challenges which flip chip packages face when bump pitch size keep shrinking. A large FCBGA (flip chip ball grid array) package for 45 nm Cu/Low-K device with Cu pillar bumps is chosen to investigate the package reliability. Finite element models have been built with multi-level sub-modeling technique to consider the detailed Cu/Low-K...
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