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4H–SiC depletion mode metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated and characterized. The device has a structure similar to that of a metal semiconductor FET (MESFET) where a physical conducting channel already exists. A MOS gate is used to replace the Schottky gate and this allows the device to operate in depletion mode as well as accumulation mode. The oxide...
A depletion mode metal–oxide–semiconductor field effect transistor (MOSFET) has been fabricated using 4H-SiC. The basic structure is the same as that of a conventional metal–semiconductor FET (MESFET), except that the Schottky barrier gate is replaced by a MOS gate that comprises a 50nm silicon oxide (SiO 2 ). The device has a pinch-off voltage of −1.0V and a flat band voltage of 4.0V. The...
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