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Exchange bias (EB) refers to the magnetic hysteresis loop shifting away from zero field due to the exchange interaction between a ferromagnet (FM) and an antiferromagnet (AF) across their common interface [1]. Nowadays the FM/AF EB structure with in-plane anisotropy has been widely adopted in hard disk drives and magnetic random access memories based on spin valves and magnetic tunnel junctions (MTJs)...
Since the magnetic anisotropy of ferromagnetic (FM) films on semiconductor substrates has promising application for spintronics, it has stimulated extensive studies in the last two decades [1]. Remarkably, amorphous FM alloy films also exhibit uniaxial magnetic anisotropy (UMA) in the film plane when deposited on semiconductor substrates, e.g. CoFeB/GaAs (001) [2]. Although several models, including...
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