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We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.
This article addresses our concept for a highly dynamic scenario-based simulation platform for diverse wireless communication circumstance, which provides users high flexibility and ease for use to simulate complex wireless communication scenarios. It is observed that different simulation activities for wireless communication systems usually conduct a very similar processing flow. Due to this similarity...
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