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The effective masses of hole and electron in the inversion layers have been quantitatively characterized for Ge p- and n-MOSFETs, for the first time, with Shubnikov-de Haas (SdH) oscillations measurements at ultra low temperatures. It was found that the effective mass clearly increased with a larger Ns for both hole and electron in (100)/(110)/(111) Ge p and n-MOSFETs. The effectiveness and necessity...
In this work, the composition distribution in SiC films grown on Si(111) using chemical vapor deposition (CVD) method has been measured by the plan-view energy dispersive spectroscopy (EDS). The measuring original EDS data are modified by considering the multilayer structure and the attenuation due to the diffuse reflection at the interface of the voids. The relative error rate of the improved EDS...
An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°-35° C, offering low PDL <;1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.
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