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MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10nm regime. From this viewpoint, attentions have recently been paid to Ge and III–V channels. In this paper, possible solutions for realizing III–V/Ge MOSFETs on the Si platform are presented. The high quality III–V...
A low noise amplifier with dB-linear variable gain has been designed and fabricated based on high performance SiGe HBT in this paper. Negative feedback technology has been adopted to change the transmission gain of HBT through variable resistance of a forward biased p-i-n diode in the feedback path. The simulation results and measurement results agree well in frequency of 1.8GHz for CDMA application...
The two-dimensional temperature profile of a multi-finger power SiGe HBT is studied with the electrothermal model, which shows that there is an uneven temperature profile over the device finger for HBT with uniform finger length. Because of the positive current-temperature feedback, the uneven temperature profile will leads to an anomalous current distribution, which eventually caused the thermal...
As an effective and feasible method, the technology of non-uniform emitter finger spacing has been used to alleviate the thermal effects and improve the uneven temperature profile in multi-finger power SiGe HBTs. However, for the HBT with dozens of emitter fingers, designing multiple finger spacing values becomes trivial and time-consuming. In the paper, a new thermal design methodology namely Grouping...
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