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Photoluminescence (PL), X-ray diffraction (XRD) and Raman spectra have been measured to characterize the effects of phosphorus on the optical and structural properties of GaN 1-x P x alloys with x=<15%, grown by means of light-radiation heating, low-pressure metal-organic chemical vapor deposition. The PL spectra of GaN 1-x P x show the largest...
Gallium nitride films grown on sapphire substrates were successfully separated by laser radiation. The absorption of the 248-nm radiation by the GaN at the interface results in rapid thermal decomposition of the interfacial layer, yielding metallic Ga and N 2 gas. The substrate can be easily removed by heating above the Ga melting point of 29 o C. Atomic force microscopy (AFM) and...
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