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In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
We demonstrated the fabrication and study of vertical-stand-type homoepitaxial light-emitting diodes (VLEDs) on a GaN substrate with conical array structures. The conical arrays were formed on the N-face surface of the GaN substrate using a size-controllable polystyrene nanosphere as etch mask. The 20-mA output power of the VLEDs with flat backside, truncated cone, and cone arrays improved by magnitudes...
In this work, we present an investigation on Pt/graphene/GaN devices for hydrogen gas sensing applications. The graphene layer was deposited on GaN substrate using a chemical vapour deposition (CVD) technique and was characterised via Raman and X-ray photoelectron spectroscopy. The current-voltage (I–V) and dynamic response of the developed devices were investigated in forward and reverse bias operation...
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