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In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
ZnO nanostructures were grown from a solution of zinc nitrate hexahydrate and hexamethylenetetramine onto different substrates that were pretreated with an RF sputter coated ZnO seed layer. The choice of substrate was observed to have a direct effect on the morphology, orientation and surface coverage of the nanostructured arrays. Substrates that were covered in a 1.2 mum sputter coated ZnO seed layer,...
We present the systematic study of the growth mechanism of ZnO nanorods grown on Al2O3 substrates with ZnO homo-buffer, n-GaN and p-GaN interlayers. Vertically aligned ZnO nanorods with diameter of 50 nm and lengths of range of 0.1 - 2 mum were synthesized at the substrate temperature of 350 - 500degC by catalyst-free metal-organic chemical vapor deposition. A thin ZnO film was observed underneath...
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