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With the emergence of large arrays of high-functionality pixels, it has become critical to characterize the performance non-uniformity of such arrays. In this paper we characterize a 160×128 array of complex pixels, each with a single-photon avalanche diode (SPAD) and a time-to-digital converter (TDC). A study of the array's non-uniformities in terms of the timing resolution, jitter, and photon responsivity...
In this paper, we present an array of 160x128 pixels capable of detecting the ToA of single photons, implemented in 0.13μm CMOS technology. The sensor is partitioned into 4 identical quadrants that are served by a balanced clock tree so as to minimize skews and to ensure the fastest possible readout process. The pixels in the rows are read out in rolling shutter mode in two directions (top and bottom)...
A 3×3 prototype image sensor array consisting of 2μm diameter CMOS avalanche photodiodes with 3-transistor NMOS pixel circuitry is integrated in a 90nm CMOS image sensor technology. The 5μm pixel pitch is the smallest achieved to date and is obtained with <;1% crosstalk, 250Hz mean dark count rate (DCR) at 20C, 36% photon detection efficiency at 410nm (PDE) and 107ps FWHM jitter. The small pixel...
We report on the design and characterization of a 32 times 32 time-to-digital converter (TDC) array implemented in a 130 nm imaging CMOS technology. The 10-bit TDCs exhibit a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential- and integral non-linearity (DNL and INL) were measured at plusmn 0.4 and plusmn1.2 LSBs respectively. The TDC...
A Time-to-Amplitude Converter (TAC) with embedded analog-to-digital conversion is implemented in a 130-nm CMOS imaging technology. The proposed module is conceived for Single-Photon Avalanche Diode imagers and can operate both as a TAC or as an analog counter, thus allowing both time-correlated or time-uncorrelated imaging operation. A single-ramp, 8-bit ADC with two memory banks to allow high-speed,...
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