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High resolution core level photoemission spectra from clean GaAs(110) semiconductor surfaces are analyzed considering the possibility of local barrier height variations at the surface. A simple model calculation is presented and is used to predict the effects of such local variations on the line shape of Ga 3d and As 3d core level emission. We clearly show that the presence of differently pinned zones...
High resolution core level photoemission spectra from clean GaAs(110) semiconductor surfaces are analyzed considering the possibility of local barrier height variations at the surface. A simple model calculation is presented and is used to predict the effects of such local variations on the line shape of Ga 3d and As 3d core level emission. We clearly show that the presence of differently pinned zones...
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