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The physical mechanism of the time, emitter lateral dimension (AE) and low-high temperature dependent degradation under mixed-mode stress for C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) is investigated. We focus on the impact of mixed-mode stress on device characteristics such as base current (IB) and current gain (β) degradation rate, device scaling issue and low-high...
We present a study on the effect of ambient gases on the electrical properties of carbon nanofibers (CNFs). The resistances of a CNF placed horizontally on a substrate in air and in vacuum are compared. CNFs in air show much lower current capacities compared to those in vacuum. Joule heat produced by constant current stressing results in desorption of gas molecules responsible for carrier trapping,...
As scaling becomes increasingly difficult, 3D integration has emerged as a viable alternative to achieve the requisite bandwidth and power efficiency challenges. However mechanical stress induced by the through silicon vias (TSV) is one of the key constraints in the 3D flow that must be controlled in order to preserve the integrity of front end devices. For the first time an extended and comprehensive...
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