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This paper reports the MOVPE growth of InxGa1–xN (x ∼0.5) on Si(111) with a pn junction on the surface. By optimizing growth temperature and TMI/(TMI+TEG) molar ratio, InGaN films with In content up to 0.5 are successfully grown without phase separation and metallic In incorporation. No significant differences in tilt fluctuation in grown InGaN are found among three different substrates; GaN/α–Al2...
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