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This paper reports on a theoretical analysis of DC and RF performances of a novel In0.1Ga0.9N/InN HEMT. A very high cut‐off frequency and attractive DC characteristics have been predicted. A simple analytical model is used to explain the DC characteristics. The cut‐off frequency which has been found more than 0.6 THz for a gate length of 0.1 µm is explained with low‐field mobility. The maximum drain...
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