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In this paper, a comparative study of Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors is presented. MoO3 nanostructured films with three different morphologies (nanoplatelets, nanoplatelets-nanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen...
In this paper, we report the development of a novel Pt/MoO3 nano-flower/SiC Schottky diode based device for hydrogen gas sensing applications. The MoO3 nanostructured thin films were deposited on SiC substrates via thermal evaporation. Morphological characterization of the nanostructured MoO3 by scanning electron microscopy revealed randomly orientated thin nanoplatelets in a densely packed formation...
A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
In this paper, we present gas sensing properties of Pt/graphene-like nano-sheets towards hydrogen gas. The graphene-like nano-sheets were produced via the reduction of spray-coated graphite oxide deposited on SiC substrates by hydrazine vapor. Structural and morphological characterizations of the graphene sheets were analyzed by scanning electron and atomic force microscopy. Current-voltage and dynamic...
Sometimes failure analysis had to deal with the situation of the failure passing at room temperature but failing at high temperature, so that it was necessary to develop analyzing skills at high temperature. This paper introduced a special case fail at high temperature. By applying self heating method to obtain high temperature condition, the FA process of this case was described in detail. Finally...
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