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A 1Mb Pseudo Static RAM has been fabricated using 1.3??m n-well CMOS technology. For ease of use, three kinds of high speed modes: static column, page, and serial mode are realized on the same chip controlled by timing relations. Improvement of the Vbb generator circuits and refresh timer allows for battery back up operation. A typical CE access time of 60ns is achieved. Operating and standby current...
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