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In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO2 doped ZrO2 gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO2 doped ZrO2 is up to 600 °C. The transmittance and band gap value of the ZrTiOx film were about 75% and 4.0 eV, respectively. 300 °C-annealed...
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