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The resistivity change of low resistivity Si substrates by rapid thermal processing (RTP) and subsequent low tem‐perature annealing is reported. The observed resistivity increase after RTP can be explained by dopant deactivation due to trapping by dopant atoms of intrinsic point defects created during the high temperature step. Similar dopant deactivation is observed during growth of low resistivity...
Silicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in‐situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To study these two types of SiNWs a general growth rate model is presented. The fit curves from this model...
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