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A highly integrated K and Ka-band transceiver MMIC that integrates 33 circuits in a 3 mm × 3 mm area using three-dimensional MMIC (3D-MMIC) technology is presented. It achieved a noise figure of 3.4 dB and a conversion gain of 39 dB at 25 GHz in the receive mode. It also achieved a high P1dB of 8 dBm and a conversion gain of 29 dB at 25 GHz in the transmit mode. The power dissipation of the MMIC is...
A compact GaAs pHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. It is composed of a common-source/common-gate active balun, a balanced frequency doubler, and a band pass filter. Excellent miniaturization is achieved by using double-and triple-layer stacked inductors and a miniaturized stub as a band-pass filter with a thin-film microstrip line. The chip size is...
A highly integrated quasi-millimeter-wave transmitter MMIC that integrates 26 circuits in a 3 mm times 3 mm area using three-dimensional MMIC (3D-MMIC) technology is presented. The power dissipation of the MMIC is only 0.54 W. It achieved a high P1dB of 6 dBm and gain of 19 dB at 26 GHz. Furthermore, it integrated step attenuators with a new built-in inverter using an N-channel depression FET for...
Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We tested single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. These proposed multilayer inductors can produce higher inductance in the same area as conventional 2D-MMICs. The performance of the single-and multilayer...
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