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There is a rapid transition in the semiconductor packaging industry of devices moving toward 40/45-nm extreme low k (ELK) from the development phase into mainstream semiconductor assembly manufacturing. The drive to achieve adoption without major changes to process and equipment infrastructure while meeting the superior yield necessary is high. The main goal of this paper is to share learning's and...
This paper focused on the delamination study of low profile leadframe package with exposed pad (eLQFP). In this type of package, a specification of silver plating area is required for bond pad. With the shrinkage of the non-plating pad area, and because of low adhesion strength between silver and mold compound, the interface of mold compound and die-pad in the silver plating area may potentially delaminate...
Multi silicon dies stack using through silicon via (TSV) is required for higher performance, greater package miniaturization and more functionality electronic device. A through silicon interposer (TSI) enables interconnect pitch matching between a high I/Os top chip and a low cost organic substrate. TSI also mitigates the risk of extreme low-K (ELK) layers delamiantion. This paper demonstrates the...
As the progression of 45/40nm ELK devices into mainstream semiconductor assembly manufacturing process increases, the drive to achieve adoption without major changes to process and equipment infrastructure while meeting the superior yield necessary is high. The main goal of this article is to share learning's and provide solutions for integration of 45/40nm ELK devices into Flip Chip and Wire Bond...
Copper pillar bumping is a promising solution to cope with the challenges which flip chip packages face when bump pitch size keep shrinking. A large FCBGA (flip chip ball grid array) package for 45 nm Cu/Low-K device with Cu pillar bumps is chosen to investigate the package reliability. Finite element models have been built with multi-level sub-modeling technique to consider the detailed Cu/Low-K...
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