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We report the realization of asymmetric recess etching in the fabrication of gate grooves for MODFETs based on InAlAs/InGaAs heterojunctions. The novel technology employs asymmetric electrochemical etching when the surface metal of Pt and Ni are deposited on the source and drain pads, respectively. Devices fabricated with this technology, though still immature, show similar DC performance to those...
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