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With the increasing of the sintered NdFeB magnet application, there is a great deal of the demand of Nd, consequently the price of Nd is rising. Therefore, it is necessary to produce a novel sintered NdFeB magnet at low costs. In this paper, the dual-main-phase CeNdFeB magnets were prepared. The corrosion potential of Ce is −2.48V, which is lower than that of Nd (−2.41V) [1]. But Ce is much cheaper...
The high current density induced failure in Ge2Sb2Te5(GST)-based phase change memory (PCM) is investigated. A strong dependence of cycling endurance on the polarity of the operation current is observed and reported for the first time. The cycling endurance is reduced by 4 orders of magnitude when the current polarity is reversed. Careful TEM analysis of failed cells revealed a thin void in GST over...
Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ~105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing...
Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive...
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