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GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm-1, allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser...
Single mode emission of tapered lasers was achieved by an on-chip distributed Bragg reflector. The quantum dot based devices show stable single mode emission around 920 nm, good beam quality and output powers up to 2 W.
GaInNAs-based 1240 nm laser diodes are realized with internal losses as low as 0.5 cm-1 allowing maximum output powers of 9 W at room temperature under continuous-wave operation. Wavelength stabilized tapered laser diodes show output powers of 1W and M2 down to 1.4 demonstrating potential for pumping applications.
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