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GaAs monolithic variable attenuators have been developed. They operate in a very wide frequency band, are very small, and are controlled by one voltage. Insertion loss of 2-3 dB and a dynamic range of attenuation of 10 dB were obtained in the 2-18 GHz frequency range,
A two-stage X-, Ku-band monolithic FET amplifier has been developed. Initial results indicate a gain of 7-10 dB across the 8-20 GHz band with a typical rf power output of 100 mW. A balanced amplifier consisting of two two-stage amplifiers and a pair of Lange couplers yielded 10.5 +- 1 dB gain from 7.5 to 18 GHz and an output power of 150-250 mW in Ku-band.
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