The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A 30-nm operating wavelength range was realized for a 1.3-µm InGaAlAs DML with a 25.8-Gb/s push-pull driving configuration. Clear eye openings, an 8.0-dBm output power, and a 4.0-dB dynamic extinction ratio were obtained.
Incident-power-dependent extinction ratio of electroabsorption modulators is shown and theoretically investigated by using microscopic theory combined with heat-flux calculation. The phenomenon stems from voltage-dependent temperature rise and the calculated results agree well with the experiment.
A 2-km 40-Gb/s transmission from -15 to 80degC is demonstrated using a 1.55-mum InGaAlAs EML for the first time. A power penalty below 2 dB with a dynamic extinction ratio of over 8.2 dB is achieved at -15degC.
An 80-km SMF transmission at 10-Gb/s using a 1.55-mum, InGaAlAs EML was demonstrated over an extended temperature range (-25degC to 100degC). A dynamic extinction ratio of over 9 dB at -25degC was obtained.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.