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A highly integrated K and Ka-band transceiver MMIC that integrates 33 circuits in a 3 mm × 3 mm area using three-dimensional MMIC (3D-MMIC) technology is presented. It achieved a noise figure of 3.4 dB and a conversion gain of 39 dB at 25 GHz in the receive mode. It also achieved a high P1dB of 8 dBm and a conversion gain of 29 dB at 25 GHz in the transmit mode. The power dissipation of the MMIC is...
A highly integrated quasi-millimeter-wave transmitter MMIC that integrates 26 circuits in a 3 mm times 3 mm area using three-dimensional MMIC (3D-MMIC) technology is presented. The power dissipation of the MMIC is only 0.54 W. It achieved a high P1dB of 6 dBm and gain of 19 dB at 26 GHz. Furthermore, it integrated step attenuators with a new built-in inverter using an N-channel depression FET for...
Newly developed multi-layer inductors on GaAs three-dimensional MMICs are presented. We tested single-, double-, triple-, and quadruple-layer stacked-type inductors in what may be the first report on inductors on a GaAs MMIC with three or more layers. These proposed multilayer inductors can produce higher inductance in the same area as conventional 2D-MMICs. The performance of the single-and multilayer...
A highly integrated quasi-millimeter wave receiver chip that integrates 22 circuits on a 3 x 2.3 mm chip using three-dimensional MMIC (3D-MMIC) technology is presented. The receiver MMIC operates with an LO signal in the 2.7-3.1 GHz range. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO chain, resulting in an IF center frequency of 2.4 GHz. It can use low-cost VCOs and demodulators...
A highly integrated X-band frequency quadrupler MMIC using three-dimensional MMIC (3D-MMIC) technology is presented. It consists of four amplifiers, two doublers, and a 2-band elimination filter. These seven circuits are integrated on only a 2.25 mm times 1.05 mm chip. The third and fifth harmonic components, which are spurious components nearest to the desired component, are well suppressed. The...
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