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A “shrink process” for reducing the size of a magnetic tunnel junction (MTJ) and mitigating the MTJ processing damage by using a sequence of oxidation and covering silicon dioxide (SiO2) film after MTJ etching is proposed. Using the novel process, MR (magneto-resistance) ratio was improved more than 10% and junction size was able to be reduced to 20-nm diameter in a MTJ with processing size of 35-nm...
In this paper, we first report a novel and highly manufacturable multi-level perpendicular magnetic tunnel junction (p-MTJ) with a single top-pinned layer and multiple barrier/free layers. In the proposed p-MTJ structure, all tunnel barriers and free layers lie under a thick pinned layer, which enables good resistance control and large coercivity due to the effect of small film roughness. We also...
Strain-engineering using the inverse magnetostrictive effect has been performed to improve the performance of spin transfer torque magnetoresistance random access memory (STT-MRAM). The thermal stability factor E/kBT has been enhanced by 40% without increasing a switching current by controlling the process-induced stress in a free layer in MTJ (magnetic tunnel junctions) with mechanically engineered...
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