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This paper presents the power density developments of high-power isolated dc-dc converter to be utilized in a higher voltage direct-current (HVDC) power-supply system of a data center. This technique results in a prototype of dc-dc converter unit which is smaller by factor of ten when compared with the conventional one, and the area of power-supply system becomes much smaller than before. Consequently,...
High-switching-frequency operation is essential for reducing the size and weight of LC filters in medium-voltage power converters. In this work, hybrid pairs of 6 kV SiC-PiN diodes and 4.5 kV Si-IEGTs have been applied to realize the high-switching-frequency operation. A gate-driving technique with an extremely low gate resistance called hard gate driving is employed for low switching losses of the...
In this paper, a design of high output power density 400/400V isolated dc/dc converter for power supply in data center is discussed. The isolated DC/DC converter uses the hybrid pair of SJ-MOSFET and SiC-SBD power devices. A high accuracy of DC/DC converter analysis is carried out by considering the intrinsic and extrinsic loss parameter of power devices and circuit board. Based on this analysis,...
In this paper, the performance of high output power density 400/400 V isolated dc/dc converter for power supply in data center is investigated. The isolated dc/dc converter uses the hybrid pair of SJ-MOSFET and SiC-SBD power devices. A high accuracy of dc/dc converter analysis is carried out by considering the intrinsic and extrinsic loss parameter of power devices and circuit board. Based on this...
An SOS cathode was fabricated using MOSFET fabrication processes. The cathode can operate with low operation voltage in a low vacuum, which promises a simple system as well as molecular-level material engineering in various ambients.
Time-dependent dielectric breakdown (TDDB) of MIS and MIM capacitors with Cu electrodes is investigated. The dielectric breakdown lifetime strongly depends on (1) the material and (2) the electric field strength of the dielectrics in contact with the Cu anode, while the dependence of the TDDB lifetime on the dielectric thickness and the capacitor structure (single-layer or multilayer) is small. In...
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