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A 3.8-ns, 257-mW CMOS 16×16 multiplier with a supply voltage of 4 V is described. A complementary pass transistor logic (CPL) is proposed and applied to almost the entire critical path. The CPL consists of complementary input/output, an NMOS-pass-transistor logic network, and CMOS output inverters. The CPL is twice as fast as the conventional CMOS due to lower input capacitance and greater...
A 25- mu m/sup 2/ poly-Si PMOS load SRAM (static random access memory) cell, called a PPL cell, has been developed. The cell has been excellent retention characteristics, high soft-error immunity, and low standby power. These advantages are achieved using poly-Si PMOS loads and cross-coupled stacked capacitors formed between the NMOS and the stacked poly-Si PMOS. A large poly-Si PMOS ON current lowers...
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