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This paper elucidated for the first time that titanium (Ti) is an excellent barrier metal (BM) material from the stand point of cost and performance, especially for the porous low-k ILD materials. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by introducing Ti instead of the conventional tantalum (Ta). It has been considered that the...
A key technology for realizing an effective k-value (keff) required for 45nm node is proposed. We studied the behavior of effective dielectric constant derived from capacitance of double-level copper interconnect wires with porous low-k material in detail. The porous low-k materials easily absorb moisture due to process damage and the dielectric constant drastically increases. We have confirmed that...
MOCVD TiSiN was evaluated as a barrier for Cu interconnects application. The TiSiN film was formed by SiH/sub 4/ soaking of MOCVD TiN. The TiSiN film showed improved wetting and adhesion to Cu as well as less stress hysteresis in its integration with Cu. The low stress hysteresis yields higher resistance to Cu void generation during hot storage testing. Electrical tests on DLM Cu test structures demonstrated...
Interconnect delay is dominant in today's high speed VLSI circuits and there have been various studies on ways to resolve it. A repeater insertion tool "RePertory" has been developed to solve the interconnect timing problem on a 300 MHz 128-bit 2-way superscalar microprocessor. Because of its practical simple algorithm, the location of over 5700 repeaters distributed over 5 modules is calculated...
Electromigration lifetime tests on TiN-Ti-AlCu-TiN-Ti stacked structures with various upper Ti film thicknesses have been carried out on two-level interconnect structures connected with W-plugs. We found that a high electromigration resistance was obtained with thin Ti, resulting in an island shaped Al/sub 3/Ti intermetallic. This result is inconsistent with a well-known bypass model. We propose a...
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