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GaN Schottky barrier ultraviolet (UV) photodetectors (PDs) with a low-temperature intermediate layer were fabricated and characterized. With the intermediate layer, it was found that we could reduce the reverse leakage current by more than three orders of magnitude and achieve a 45 times larger UV-to-visible rejection ratio. Compared with the conventional GaN...
We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 × 10-10 W and 2.26 × 109 cmHz0.5 W-1...
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