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The authors report on the effects of plasma pre-treatment before SiN x passivation on the electrical traps of undoped AlGaN/GaN HFETs. Different plasmas were tested with O 2 or CF 4 or (O 2 +CF 4 ) gas. The maximum drain current decreased when an O 2 plasma was used before SiN x passivation, and increased up to 35% in the other cases. The best...
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