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This paper discusses the effect of pulse repetition rates on silicon wafer modification by four-beam laser interference. In the work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of dots, and different laser pulse repetition rates were applied to the process in the air. The results were obtained from 10 laser exposure pulses with the single laser...
This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser faiences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fiuences of 637mJ/cm2, 780mJ/cm...
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