The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Spintronics strives to revolutionize conventional electronics by integrating magnetic materials with semiconductor devices, such as the spin field effect transistor (SFET)[1], which not only improve the capabilities of electronic devices, but develop new functionalities. For electrodes of spin injection and detection in SFET device, half metallic Fe3O4 is an attractive candidate because its high Curie...
In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.