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A fully integrated MMIC (monolithic microwave integrated circuit) receiver was designed and fabricated using 0.2- mu m pseudomorphic InGaAs/GaAs HEMT (high electron mobility transistor) process technology. This MMIC receiver incorporates a single-stage RF amplifier, a two-stage balanced LO amplifier, a single-stage IF amplifier, an IF switch, and an image-reject diode mixer. Results for these receiver...
A monolithic microwave integrated circuit (MMIC) chip containing a W-band voltage controlled oscillator (VCO). transmit amplifiers, a receiver low noise amplifier and a mixer is discussed. It is used as the front-end of a homodyne FMCW radar for target range and range rate sensing applications. The 6.9-mm*3.6-mm monolithic chip was fabricated using 0.1- mu m pseudomorphic InGaAs-AlGaAs-GaAs HEMT process...
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