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In this paper transmission-mode GaN photocathodes was activated by Cs/O, its quantum efficiency curve and the factors which influenced the quantum efficiency mostly were studied. Transmission-mode GaN photocathodes was grown by Metal-Organic Chemical Vapor Deposition (MOCVD).
In this paper, the "three-step model" of photoemission mechanism for gallium nitride (GaN) photocathode is discussed. The first step is the absorption of incidence light. The incidence photon energy is absorbed by the electrons in the valence band, and this establishes the foundation that the electrons in the valence band are stimulated to the conduction band. The second step is the transportation...
Plasmon coupling of dimers of Ag nanoparticles is studied by the EELS as shown in Fig 1a [1]. The spectroscopic images in the above Fig. 1a are extracted from 2.8eV, 3.4eV and 3.6eV respectively, where one can see the preferable exciting points of the features around the Ag nanoparticles. With the aid of DDA calculation(Fig. 1b), the three features are identified as the in-phase plasmon coupling,...
The traditional corrosion methods based on oxidizing and dissolving can't remove oxygen (O) and carbon (C) on GaN effectively. This is because GaN has stronger chemical stability, the strong oxidation chemical reagent like H2O2 can't oxidize GaN surface. In addition the oxide on GaN surface can't be dissolved effectively by the strong acid solution such as HCl or H2SO4. The depuration method for GaN...
Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant.
We have prepared ZnO nanostructures using electrodeposition method for different precursors and deposition conditions. Very wide range of morphologies of ZnO nanostructures could be obtained by using this simple and inexpensive solution based growth method.
GaN films have been fabricated by ammoniating electrodeposited films. We have investigated the influence of electrodeposition parameters on the morphologies and structures of electrodeposited layers on Si(100) subtrates by using SEM and XRD.
Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensive attention due to both the intriguing fundamental properties and their potential applications in optoelectronic devices. GaAs NWs grown by metalorganic chemical vapor deposition (MOCVD) often exhibit tapered and kinked morphologies, depending on growth temperature. However, straight NWs of uniform...
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