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An improved analytical calculation for the MOSFET surface potential is introduced by virtue of a high-order approximation. This high-order analytical approximation improves the accuracy of the surface potential from 1 nV to 3 fV for typical design conditions yet with little additional computational effort. In particular, this new scheme extends the applicable range of the analytical approximation...
We report the first SOI MOSFET model that takes advantage of the recent progress in bulk MOSFET modeling. The surface-potential-based model is implemented without iterative loops, and includes physical modeling of the moderate inversion region and all small-geometry effects without relying on the traditional threshold-voltage-based formulation. The new model is verified for a 90 nm node process (40...
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