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The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth...
In this work we have measured the lateral spontaneous emission profile for the lasers, using scanning near-field optical microscopy (SNOM). Since the near-field of the spontaneous emission maps the lateral carrier distribution in the active region, this measurement provides a way to directly measure the lateral diffusion. The obtained profile therefore represents the optical mode which is well confined...
In this work, we optimize the thermal performance of a double quantum well GalnNAs ridge waveguide laser using an accurate in-house 2D electro-opto-thermal laser simulator. The simulator has shown good agreement with experiments after a detailed calibration procedure. Using calibrated material parameters, we investigate the influence of the p-cladding doping concentration on the heat generation within...
The simulation of double quantum well (QW) GalnNAs ridge-waveguide (RW) lasers is performed over a wide range of cavity lengths and operating temperatures using a comprehensive in-house 2D laser simulator that takes into account all of the major device physics, including current spreading, capture escape processes, drift diffusion in the QW, 2D optical modes and fully resolved lasing spectra. The...
We demonstrate uncooled 2.5 Gb/s operation up to 110degC of 1.3 mum GaInNAs double quantum well lasers with low threshold current and excellent temperature stability.
We demonstrate uncooled 10 Gbps operation of 1.3 μm ridge waveguide GaInNAs lasers with a double quantum well active region up to 110°C. The low temperature sensitivity enables the use of a constant modulation voltage
In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same...
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