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The recently suggested time-dependent defect spectroscopy (TDDS) has allowed us to study the recoverable component of NBTI at the single-defect level. To go beyond our previous efforts, we have performed a long-term TDDS study covering also the kilo-second time window. We found that even in this extended window NBTI recovery is due to a collection of first-order reactions. In particular, there is...
An algorithm to extract the statistical properties of oxide traps in ultra-small metal oxide silicon field effect transistors (MOSFETs) is presented. The algorithm uses data from time dependent defect spectroscopy (TDDS) measurements. It works reliable in a great range of circumstances, and automatically detects and correctly processes variations in the measurement data due to channel percolation...
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