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A W/WN x /poly-Si composite structure (poly-metal) has been proposed as a low resistivity gate material. It has been found that an ultrathin WSiN layer forms at the W/Si interface after annealing, and as a result, the W/WSiN/poly-Si structure is very stable up to 950 o C. In this paper, the formation mechanism of the ultrathin WSiN layer was studied. It was found that a 1 nm WSiN layer...
A W/WN x /poly-Si composite structure (poly-metal) has been proposed as a low resistivity gate material. It has been found that an ultrathin WSiN layer forms at the W/Si interface after annealing, and as a result, the W/WSiN/poly-Si structure is very stable up to 950°C. In this paper, the formation mechanism of the ultrathin WSiN layer was studied. It was found that a 1 nm WSiN layer forms...
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