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Characterization of a HfO 2 (3nm)/Si(001) interface prepared by atomic-layer chemical vapor deposition has been performed with high-resolution Rutherford backscattering spectroscopy (HRBS). Strain depth profile in the interface region has been measured with a combination of HRBS and channeling technique. It is found that a thin interface SiO x layer lies between the HfO 2 film...
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