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Presented are the first DC and RF results for a double heterojunction bipolar transistor, at a 6.2 A lattice constant, incorporating InAs0.66Sb0.34. These devices show excellent performance with a high collector current density of 1.9 × 105 A/cm2, high breakdown voltage over 2.5 V, high short-circuit current gain cutoff frequency of 59 GHz, and maximum frequency of oscillation of 34 GHz.
Summary form only given. Advanced lll-V transistor technology using 6.2 Å materials reaches a record 59 GHz. The highest cutoff frequency of double heterojunction bipolar transistors (HBTs) fabricated using 6.2 Å materials has been demonstrated by researchers at the Naval Research Laboratory (NRL) in the US. The team fabricated InAlAsSb/InGaSb HBTs with high conductivity InAsSb layers, and achieved...
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