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We demonstrate that micromachining multiple quantum wells produces lateral (in-plane) modifications to the semiconductor band structure that are accurately modeled by finite-element analysis combined with an eight-level band-structure calculation
Summary form only given. Recent studies have been carried out on the resonant response from single interface fluctuation quantum dots. Such a discrete-level model yields unique signatures under strong resonant driving, including Rabi oscillations. To date, Rabi oscillations (excluding microcavity studies) have only been reported for two-dimensional excitonic systems. We present data showing the nonlinear...
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