The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing degradation. A simple electrostatic argument showed that the GAA device had smaller degradation...
We have successfully developed a new quantitative ITAT (inelastic trap-assisted tunneling) based SILC (stress induced leakage current) model by introducing traps with a deep energy level of around 4.0 eV which can explain two field dependencies, i.e. Fowler-Nordheim (FN) field and the direct tunneling (DT) field dependence. For simple analytical models, we introduce the most favorable trap position,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.